FREE RETURNS. STANDARD SHIPPING ORDERS $99+
Showing all 10 results
Diamond Epitaxial Wafer for MOSFET MSE Supplies offers Diamond Epitaxial Wafer with either p-type or n-type doping for various applications. It has extremely high current density and voltage compared to the widely used silicon. The devices made with diamond can operate in harsh environments like high temperature and radiation. With wafers could also easily handle higher voltage and reduce energy losses…
150 mm P Type (B-doped) SEMI Standard Prime Grade Silicon Wafer <100>, 10~20 ohm-cm, Single Side Polished, 6 inch Si Wafer Product SKU#: WA0811 Product Specifications Material: Single Crystal Silicon Wafer Growth Method: CZ Orientation: <100> + – 0.5 deg Diameter: 150 mm + – 0.2 mm Thickness: 675 um + – 25 um (SSP)…
MSE PRO™ 2 inch diameter Silicon Carbide (SiC) Crystal Substrate, 4H 6H P-type SiC Wafers (Dummy Grade) MSE Supplies offers 2 inch P-Type Silicon Carbide (SiC) Wafer in either 4H or 6H polytype. It has similar properties as the N-type Silicon Carbide (SiC) wafer, such as high temperature resistance, high thermal conductivity, high electrical conductivity, etc. P-type SiC substrate…
MSE Supplies offers 4 inch 3C-N Silicon Carbide Wafers N-Type SiC Substrates. It has a crystal structure of silicon carbide where the silicon and carbon atoms are arranged in a cubic lattice with diamond-like structure. It has several superior properties than the widely used 4H-SiC, such as higher electron mobility and saturation velocity. The performance of 3C-SiC…
MSE PRO™ 4 inch Aluminum (Al) Thin Film on Silicon Wafer This versatile metal, aluminum, is a commonly used material due to its lightweight nature, excellent heat and electricity conduction, and strong reflectivity. Its applications range from telescope lenses and headlamps to nanoparticles and plasmonic devices. Additionally, aluminum thin films are utilized in various industries…
MSE PRO™ 4 inch Aluminum-Copper (Al-Cu) Thin Film on Silicon Wafer Aluminum-copper (Al-Cu) alloys have become a popular choice for interconnects in integrated circuits due to their excellent conductivity and processing capabilities. Al-Cu thin films are renowned for their exceptional thermal stability, superior conductivity, and minimal resistivity. Specifications: Size 4 inch Substrate Silicon wafer Substrate…
MSE PRO™ 4 inch Undoped 3C-SiC Epitaxial Wafer on Silicon, Epi Thickness: 300nm 3C-SiC belongs to the wide band gap semiconductor. Despite different polytypes, it has similar superior properties over traditional materials. It offers high resistance and semi insulating properties. During epitaxial growth, high concentration of electrically active dopants can be introduced into the 3C-SiC epitaxial layers,…
MSE PRO™ Boron Doped Diamond Electrode on Monocrystalline Silicon Substrate (BDD Mono-Si Electrode) MSE Supplies offers high quality Boron Doped Diamond Electrode on Monocrystalline Silicon Substrate (BDD Mono-Si Electrode). It is recognized as being superior to other electrode materials due to excellent electrochemical properties. Main advantages include: (i) outstanding chemical and dimensional stability, (ii) exceptionally low background current,…
MSE PRO™ Boron Doped Diamond Electrode on Monocrystalline Silicon Substrate (BDD Mono-Si Electrode) MSE Supplies offers high quality Boron Doped Diamond Electrode on Monocrystalline Silicon Substrate (BDD Mono-Si Electrode). It is recognized as being superior to other electrode materials due to excellent electrochemical properties. Main advantages include: (i) outstanding chemical and dimensional stability, (ii) exceptionally…
MSE PRO™ Boron Doped Diamond Electrode on Niobium (BDD Nb Electrode) MSE Supplies offers high quality Boron Doped Diamond Electrode on Niobium (BDD Nb Electrode). The BDD is grown on Niobium (Nb), which makes it different from more common silicon substrate. It has improved chemical resistance and electrochemical stability than silicon based. It is recognized as being superior to…
End of content
End of content
No products in the cart.
